Title Growth mode and strain evolution during InN growth on GaN(0001) by molecular-beam epitaxy
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چکیده
منابع مشابه
Ion-assisted nucleation and growth of GaN on sapphire„0001..
We have performed a real-time x-ray scattering study of the nucleation of GaN on sapphire~0001! by gas-source molecular-beam epitaxy. GaN growth using thermal ammonia and Ga~C2H5!3 exhibited a rapidly decaying intensity at the 0001 reflection, characteristic of three-dimensional cluster growth. Growth with 30-eV NHx 1 ions and Ga~C2H5!3 exhibited layer-by-layer intensity oscillations with maxim...
متن کاملGaN Nucleation and Growth on Sapphire (0001): Incorporation and Interlayer Transport
GaN growth on nitridated sapphire (0001) by rf plasma-assisted metal-organic molecular-beam epitaxy is shown to exhibit a highly superlinear growth rate and a transition from strained, smooth growth to relaxed cluster growth during the first layer. A coupled rate-equation model suggests that the growth rate arises from both the site-dependent reactivity of precursor molecules and a layer-depend...
متن کاملSurface structures and growth kinetics of InGaN(0001) grown by molecular beam epitaxy
The surface structures and growth kinetics of InGaN(0001) are studied. It is well known that during molecular beam epitaxy GaN surfaces undergo a smooth to rough transition when the growth condition is switched from Ga-rich to N-rich. It is found here that indium atoms have only small effect on this transition when deposited on GaN(000 ), but when deposited on GaN(0001) the indium acts as a sur...
متن کاملStudy of InN epitaxial films and nanorods grown on GaN template by RF-MOMBE
This paper reports on high-quality InN materials prepared on a GaN template using radio-frequency metalorganic molecular beam epitaxy. We also discuss the structural and electro-optical properties of InN nanorods/films. The X-ray diffraction peaks of InN(0002) and InN(0004) were identified from their spectra, indicating that the (0001)-oriented hexagonal InN was epitaxially grown on the GaN tem...
متن کاملGallium desorption kinetics on (0001) GaN surface during the growth of GaN by molecular-beam epitaxy
Gallium Ga surface desorption behavior was investigated using reflection high-energy electron diffraction during the GaN growth. It was found that the desorption of Ga atoms from the 0001 GaN surfaces under different III-V ratio dependents on the coverage of adsorbed atoms. Doing so led to desorption energies of 2.76 eV for Ga droplets, 1.24–1.89 eV for Ga under Ga-rich growth conditions, and 0...
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